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1. product profile 1.1 general description 500 w ldmos power transistor intended for l-band radar applications in the 1.2 ghz to 1.4 ghz range. 1.2 features and benefits ? easy power control ? integrated esd protection ? high flexibility with resp ect to pulse formats ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (1.2 ghz to 1.4 ghz) ? internally matched for ease of use ? compliant to directive 2002/ 95/ec, regarding restricti on of hazardous substances (rohs) 1.3 applications ? l-band power amplifiers for radar applications in the 1.2 ghz to 1.4 ghz frequency range bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor rev. 3 ? 5 august 2013 product data sheet table 1. test information typical rf performance at t case =25 ? c; t p = 300 ? s; ? = 10 %; i dq = 150 ma; in a class-ab production test circuit. test signal f v ds p l g p ? d t r t f (ghz) (v) (w) (db) (%) (ns) (ns) pulsed rf 1.2 to 1.4 50 500 17 50 20 6
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 2 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol bll6h1214-500 (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] BLL6H1214LS-500 (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version bll6h1214-500 - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a BLL6H1214LS-500 - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 100 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 3 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 5. thermal characteristics 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit bll6h1214-500 z th(j-c) transient thermal impedance from junction to case t case =85 ? c; p l =500w t p = 100 ? s; ? = 10 % 0.07 k/w t p = 200 ? s; ? = 10 % 0.08 k/w t p = 300 ? s; ? =10% 0.1 k/w t p = 100 ? s; ? =20% 0.1 k/w BLL6H1214LS-500 z th(j-c) transient thermal impedance from junction to case t case =85 ? c; p l =500w t p = 100 ? s; ? = 10 % 0.046 k/w t p = 200 ? s; ? = 10 % 0.059 k/w t p = 300 ? s; ? = 10 % 0.069 k/w t p = 100 ? s; ? = 20 % 0.064 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.7 ma 100 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 270 ma 1.3 1.8 2.2 v i dss drain leakage current v gs =0v; v ds =50v--1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 32 42 - a i gss gate leakage current v gs =11v; v ds =0v--140na g fs forward transconductance v ds =10v; i d = 270 ma 1.7 3 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =9.5a -100164m ? table 7. rf characteristics test signal: pulsed rf; t p = 300 ? s; ? = 10 %; rf performance at v ds =50v; i dq = 150 ma; t case =25 ? c; unless otherwise specified, in a class-ab production test circuit. symbol parameter conditions min typ max unit p l output power 500 - - w v ds drain-source voltage p l =500w--50v g p power gain p l =500w 1517- db rl in input return loss p l =500w - ? 10 - db p l(1db) output power at 1 db gain compression - 600 - w ? d drain efficiency p l =500w 4550- %
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 4 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7. test information 7.1 ruggedness in class-ab operation the bll6h1214-500 and BLL6H1214LS-500 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50v; i dq =150ma; p l =500w; t p = 300 ? s; ? = 10 %. 7.2 impedance information 7.3 test circuit p droop(pulse) pulse droop power p l =500w - 0 0.3 db t r rise time p l = 500 w - 20 50 ns t f fall time p l =500w - 6 50 ns table 7. rf characteristics ?continued test signal: pulsed rf; t p = 300 ? s; ? = 10 %; rf performance at v ds =50v; i dq = 150 ma; t case =25 ? c; unless otherwise specified, in a class-ab production test circuit. symbol parameter conditions min typ max unit table 8. typical impedance typical values per section unless otherwise specified. f z s z l (ghz) (? ) (? ) 1.2 1.268 ? j2.623 2.987 ? j1.664 1.3 2.193 ? j2.457 2.162 ? j1.326 1.4 2.359 ? j2.052 1.604 ? j1.887 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate table 9. list of components for test circuit see figure 2 . component description value remarks c1 multilayer ceramic chip capacitor 22 ? f, 35 v c2 multilayer ceramic chip capacitor 51 pf [1] c3, c4 multilayer ceramic chip capacitor 100 pf [1] c5, c11, c12 multilayer ce ramic chip capacitor 1 nf [2] c6 multilayer ceramic chip capacitor 47 pf [1] c7, c8, c10 multilayer cera mic chip capacitor 51 pf [3]
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 5 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor [1] american technical ce ramics type 100a or capacitor of same quality. [2] american technical ce ramics type 100b or capacitor of same quality. [3] american technical ce ramics type 800b or capacitor of same quality. c9 multilayer ceramic chip capacitor 100 pf [3] c13 electrolytic capacitor 10 ? f, 63 v r1 smd resistor 56 ? 0603 r2 metal film resistor 51 ? table 9. list of components ?continued for test circuit see figure 2 . component description value remarks printed-circuit board (pcb): duroid 6006; ? r = 6.15 f/m; thickness = 0.64 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 2. component layout for class-ab production test circuit 001aaj490 c1 c2 r1 c3 c4 c5 r2 c6 c8 c9 c10 c11 c12 c13 c7
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 6 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4 rf performance graphs 7.4.1 performance curves measured with ?? =10%, t p =300 ? s and t h =25 ? c v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz fig 3. output power as a function of input power; typical values fig 4. power gain as a function of output power; typical values v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; p l = 500 w; i dq = 150 ma. fig 5. drain efficiency as a function of output power; typical values fig 6. power gain and drain efficiency as function of frequency; typical values ddd 3 l : 3 / 3 / : : : ddd 3 / : * s * s g% g% g% ddd 3 / : ' ' ddd i0+] * s * s g% g% g% ' ' * s * s ' '
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 7 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4.2 performance curves measured with ? =10%, t p =300 ? s and t h =65 ? c v ds = 50 v; p l = 500 w; i dq = 150 ma. fig 7. input return loss as a function of frequency; typical value ddd i0+] 5/ 5/ lq lq 5/ lq g% g% g% v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz fig 8. output power as a function of input power; typical values fig 9. power gain as a function of output power; typical values ddd 3 l : 3 / 3 / : : : ddd 3 / : * s * s g% g% g%
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 8 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4.3 performance curves measured with ? =10%, t p =300 ? s and f = 1300 mhz v ds = 50 v; i dq = 100 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; p l = 500 w; i dq = 100 ma. fig 10. drain efficiency as a function of output power; typical values fig 11. power gain and drain efficiency as function of frequency; typical values ddd 3 / : ' ' ddd i0+] * s * s g% g% g% ' ' * s * s ' ' v ds = 50 v; i dq = 150 ma. (1) t h = ?40 ? c (2) t h = 25 ? c (3) t h = 65? c v ds = 50 v;i dq = 150 ma. (1) t h = ? 40 ? c (2) t h = 25 ? c (3) t h = 65? c fig 12. output power as a function of input power; typical values fig 13. power gain as a function of output power; typical values p i (w) 025 20 10 15 5 001aal688 700 p l (w) 500 300 100 0 200 400 600 (1) (2) (3) p l (w) 700 500 100 600 400 200 0 300 001aal689 14 12 18 20 g p (db) 10 16 (1) (2) (3)
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 9 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4.4 performance curves measured with ? =20%, t p =500 ? s and t h =25 ? c v ds = 50 v;i dq = 150 ma. (1) t h = ?40 ? c (2) t h = 25 ? c (3) t h = 65? c fig 14. drain efficiency as a function of output power; typical values p l (w) 0 200 400 600 700 500 300 100 001aal690 20 40 60 d (%) 0 (1) (2) (3) v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz fig 15. output power as a function of input power; typical values fig 16. power gain as a function of output power; typical values p i (w) 025 20 10 15 5 001aal691 700 p l (w) 500 300 100 0 200 400 600 (1) (2) (3) p l (w) 700 500 100 600 400 200 0 300 001aal692 8 4 16 20 g p (db) 0 12 (1) (2) (3)
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 10 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4.5 performance curves measured with ? =20%, t p =500 ? s and t h =65 ? c v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. fig 17. drain efficiency as a function of output power; typical values fig 18. power gain and drain efficiency as function of frequency; typical values p l (w) 0 200 400 600 700 500 300 100 001aal693 20 40 60 d (%) 0 (1) (2) (3) 001aal694 f (ghz) 1.15 1.45 1.35 1.25 14 16 12 18 20 g p (db) 10 25 35 15 45 55 d (%) 5 d g p v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz fig 19. output power as a function of input power; typical values fig 20. power gain as a function of output power; typical values p i (w) 025 20 10 15 5 001aal695 700 p l (w) 500 300 100 0 200 400 600 (1) (2) (3) p l (w) 700 500 100 600 400 200 0 300 001aal696 14 12 18 20 g p (db) 10 16 (1) (2) (3)
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 11 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4.6 performance curves measured with ? =20%, t p =500 ? s and f = 1300 mhz v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. fig 21. drain efficiency as a function of output power; typical values fig 22. power gain and drain efficiency as function of frequency; typical values p l (w) 0 200 400 600 700 500 300 100 001aal697 20 40 60 d (%) 0 (1) (2) (3) 001aal698 f (ghz) 1.15 1.45 1.35 1.25 14 16 12 18 20 g p (db) 10 25 35 15 45 55 d (%) 5 d g p v ds = 50 v; i dq = 150 ma. (1) t h = ?40 ? c (2) t h = 25 ? c (3) t h = 65? c v ds = 50 v; i dq = 150 ma. (1) t h = ? 40 ? c (2) t h = 25 ? c (3) t h = 65? c fig 23. output power as a function of input power; typical values fig 24. power gain as a function of output power; typical values p i (w) 025 20 10 15 5 001aal699 700 p l (w) 500 300 100 0 200 400 600 (1) (2) (3) p l (w) 700 500 100 600 400 200 0 300 001aal700 8 4 16 20 g p (db) 0 12 (1) (2) (3)
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 12 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4.7 performance curves measured with ? =10%, t p = 1 ms and t h =25 ? c v ds = 50 v; i dq = 150 ma. (1) t h = ?40 ? c (2) t h = 25 ? c (3) t h = 65? c fig 25. drain efficiency as a function of output power; typical values p l (w) 0 200 400 600 700 500 300 100 001aal701 20 40 60 d (%) 0 (1) (2) (3) v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz fig 26. output power as a function of input power; typical values fig 27. power gain as a function of output power; typical values p i (w) 025 20 10 15 5 001aal702 700 p l (w) 500 300 100 0 200 400 600 (1) (2) (3) p l (w) 700 500 100 600 400 200 0 300 001aal703 8 4 16 20 g p (db) 0 12 (1) (2) (3)
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 13 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4.8 performance curves measured with ? =10%, t p = 1 ms and t h =65 ? c v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. fig 28. drain efficiency as a function of output power; typical values fig 29. power gain and drain efficiency as function of frequency; typical values p l (w) 0 200 400 600 700 500 300 100 001aal704 20 40 60 d (%) 0 (1) (2) (3) 001aal705 f (ghz) 1.15 1.45 1.35 1.25 14 16 12 18 20 g p (db) 10 25 35 15 45 55 d (%) 5 d g p v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz fig 30. output power as a function of input power; typical values fig 31. power gain as a function of output power; typical values p i (w) 025 20 10 15 5 001aal706 700 p l (w) 500 300 100 0 200 400 600 (1) (2) (3) p l (w) 700 500 100 600 400 200 0 300 001aal707 8 4 16 20 g p (db) 0 12 (1) (2) (3)
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 14 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 7.4.9 performance curves measured with ? =10%, t p = 1 ms and f = 1300 mhz v ds = 50 v; i dq = 150 ma. (1) f = 1200 mhz (2) f = 1300 mhz (3) f = 1400 mhz v ds = 50 v; i dq = 150 ma. fig 32. drain efficiency as a function of output power; typical values fig 33. power gain and drain efficiency as function of frequency; typical values p l (w) 0 200 400 600 700 500 300 100 001aal708 20 40 60 d (%) 0 (1) (2) (3) 001aal709 f (ghz) 1.15 1.45 1.35 1.25 14 16 12 18 20 g p (db) 10 25 35 15 45 55 d (%) 5 d g p v ds = 50 v; i dq = 150 ma. (1) t h = ?40 ? c (2) t h = 25 ? c (3) t h = 65? c v ds = 50 v; i dq = 150 ma. (1) t h = ? 40 ? c (2) t h = 25 ? c (3) t h = 65? c fig 34. output power as a function of input power; typical values fig 35. power gain as a function of output power; typical values p i (w) 025 20 10 15 5 001aal710 700 p l (w) 500 300 100 0 200 400 600 (1) (2) (3) p l (w) 700 500 100 600 400 200 0 300 001aal711 8 4 16 20 g p (db) 0 12 (1) (2) (3)
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 15 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor v ds = 50 v; i dq = 150 ma. (1) t h = ?40 ? c (2) t h = 25 ? c (3) t h = 65? c fig 36. drain efficiency as a function of output power; typical values p l (w) 0 200 400 600 700 500 300 100 001aal712 20 40 60 d (%) 0 (1) (2) (3)
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 16 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 8. package outline fig 37. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 12-05-02 10-02-02 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 17 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor fig 38. package outline sot539b references outline version european projection issue date iec jedec jeita sot539b sot539b_po 12-05-02 13-05-24 unit (1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 a dimensions earless flanged balanced ceramic package; 4 leads sot539b bc 0.18 0.10 dd 1 ee 1 e 13.72 fhh 1 25.53 25.27 lq 2.26 2.01 u 1 32.39 32.13 u 2 w 2 0.25 inches max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 3 0 5 10 mm scale c e q e 1 e h l b h 1 u 1 u 2 d w 2 w 3 1 2 3 4 d d a f d 1 5 note 1. millimeter dimensions are derived from the original inch dimensions.
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 18 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description esd electrostatic discharge l-band long wave band ldmos laterally diffused metal-oxide semiconductor smd surface mounted device vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes bll6h1214-500_1214ls-500 v.3 20130805 product data sheet - bll6h1214-500 v.2 modifications: ? this document now describes both the bll6h1214-500 and BLL6H1214LS-500 products. ? table 1 on page 1 : ?mode of operation? changed to ?test signal?. ? table 4 on page 2 : removed row ?i d ?. ? table 7 on page 3 : ?mode of operation? changed to ?test signal?. ? section 7 on page 4 : moved several sections to this section. ? section 7.4 on page 6 : updated figure notes. ? section 7.4.1 on page 6 : updated graphs. ? section 7.4.2 on page 7 : updated graphs. ? figure 38 on page 17 : updated figure. bll6h1214-500 v.2 20100401 product data sheet - bll6h1214-500 v.1 bll6h1214-500 v.1 20090120 objective data sheet - -
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 19 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
bll6h1214-500_1214ls-500 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights r eserved. product data sheet rev. 3 ? 5 august 2013 20 of 21 nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors bll6h1214-500; BLL6H1214LS-500 ldmos l-band radar power transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 5 august 2013 document identifier: bll6h1214-500_1214ls-500 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.1 ruggedness in class-ab operation . . . . . . . . . 4 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.4 rf performance graphs . . . . . . . . . . . . . . . . . . 6 7.4.1 performance curves measured with ? =10%, t p =300 ? s and t h = 25 c . . . . . . . . 6 7.4.2 performance curves measured with ? =10%, t p =300 ? s and t h = 65 c . . . . . . . . 7 7.4.3 performance curves measured with ? =10%, t p =300 ? s and f = 1300 mhz. . . . . . 8 7.4.4 performance curves measured with ? =20%, t p =500 ? s and t h = 25 c . . . . . . . . 9 7.4.5 performance curves measured with ? =20%, t p =500 ? s and t h = 65 c . . . . . . . 10 7.4.6 performance curves measured with ? =20%, t p =500 ? s and f = 1300 mhz. . . . . 11 7.4.7 performance curves measured with ? =10%, t p = 1 ms and t h = 25 c . . . . . . . . 12 7.4.8 performance curves measured with ? =10%, t p = 1 ms and t h = 65 c . . . . . . . . 13 7.4.9 performance curves measured with ? =10%, t p = 1 ms and f = 1300 mhz . . . . . . 14 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 9 handling information. . . . . . . . . . . . . . . . . . . . 18 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 19 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 13 contact information. . . . . . . . . . . . . . . . . . . . . 20 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

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